power mosfet ? 30 v, ? 3.5 a, single p ? channel, sot ? 23 features ? low r ds(on) at low gate voltage ? low threshold voltage ? high power and current handling capability ? this is a pb ? free device applications ? load switch ? optimized for battery and load management applications in portable equipment like cell phones, pda?s, media players, etc. maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain ? to ? source voltage v dss ? 30 v gate ? to ? source voltage v gs 12 v continuous drain current (note 1) steady state t a = 25 c i d ? 2.2 a t a = 85 c ? 1.5 t 5 s t a = 25 c ? 3.5 power dissipation (note 1) steady state t a = 25 c p d 0.48 w t 5 s 1.25 pulsed drain current t p =10 s i dm ? 15.0 a operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) i s ? 1.0 a lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal resistance ratings parameter symbol max unit junction ? to ? ambient ? steady state (note 1) r ja 260 c/w junction ? to ? ambient ? t 10 s (note 1) r ja 100 1. surface ? mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces) g s d device package shipping ? ordering information ? 30 v 110 m @ ? 4.5 v 75 m @ ? 10 v r ds(on) max ? 2.2 a i d max v (br)dss sot ? 23 case 318 style 21 marking diagram/ pin assignment 2 3 1 3 drain 1 gate 2 source p ? channel mosfet ntr4171pt1g sot ? 23 (pb ? free) 3000/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. 150 m @ ? 2.5 v trfm trf = specific device code m = date code = pb ? free package (note: microdot may be in either location) ? 1.8 a ? 1.0 a NTR4171PT3G sot ? 23 (pb ? free) 10000/tape & reel ntr4171p product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
ty characteristics mosfet electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max units off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = ? 250 a ? 30 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j i d = ? 250 a, reference to 25 c 24 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = ? 24 v, t j = 25 c v gs = 0 v, v ds = ? 24 v, t j = 85 c ? 1.0 ? 5.0 a gate ? to ? source leakage current i gss v ds = 0 v, v gs = 12 v 0.1 a (note 3) gate threshold voltage v gs(th) v gs = v ds , i d = ? 250 a ? 0.7 ? 1.15 ? 1.4 v negative threshold temperature coefficient v gs(th) /t j 3.5 mv/ c drain ? to ? source on ? resistance r ds(on) v gs = ? 10 v, i d = ? 2.2 a 50 75 m v gs = ? 4.5 v, i d = ? 1.8 a 60 110 v gs = ? 2.5 v, i d = ? 1.0 a 90 150 forward transconductance g fs v ds = ? 5.0 v, i d = ? 2.2 a 7.0 s charges, capacitances and gate resistance input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = ? 15 v 720 pf output capacitance c oss 95 reverse transfer capacitance c rss 65 total gate charge q g(tot) v gs = ? 10 v, v ds = ? 15 v, i d = ? 3.5 a 15.6 nc threshold gate charge q g(th) 0.7 gate ? to ? source charge q gs 1.6 gate ? to ? drain charge q gd 2.6 total gate charge q g(tot) v gs = ? 4.5 v, v ds = ? 15 v, i d = ? 3.5 a 7.4 nc threshold gate charge q g(th) 0.7 gate ? to ? source charge q gs 1.6 gate ? to ? drain charge q gd 2.6 gate resistance r g 6.1 switching characteristics, v gs = 4.5 v (note 4) turn ? on delay time t d(on) v gs = ? 10 v, v ds = ? 15 v, i d = ? 3.5 a, r g = 6 8.0 ns rise time t r 11 turn ? off delay time t d(off) 32 fall time t f 14 turn ? on delay time t d(on) v gs = ? 4.5 v, v ds = ? 15 v, i d = ? 3.5 a, r g = 6 9.0 ns rise time t r 16 turn ? off delay time t d(off) 25 fall time t f 22 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = ? 1.0 a, t j = 25 c ? 0.8 ? 1.2 v reverse recovery time t rr v gs = 0 v, i s = ? 1.0 a, di sd /d t = 100 a/ s 14 ns charge time t a 10 discharge time t b 4.0 reverse recovery charge q rr 8.0 nc 2. surface ? mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces) 3. pulse test: pulse width 300 s, duty cycle 2% 4. switching characteristics are independent of operating junction temperatures sales@twtysemi.com 2 of 2 http://www.twtysemi.com ntr4171p product specification
|
